NFYD79 Semiconductor Device Physics, 5 ECTS-points
/HALVLEDARKOMPONENTERS FYSIK/

Advancement level:
D

Aim:
The aim of the course is to get insight into the physics of semiconductor devices used within optoelectronics, high speed and power electronics. Different methods to fabricate and process the material for the various applications are presented. The physics of the fundamental pn-junction and its applications together with the Schottky-diode, the bipolar transistor and the field-effect-transistor are covered in the course. Low-dimensional semiconductor systems, such as heterostructures and quantum wells, and their applications in e.g. detector, laser, and tunnelling devices are an essential part of the course. Another important field is the how the variation of bandgap and strain in ternary and quaternary multi-layer structures can be utilised to optimise the performance of various devices.

Prerequisites:
Participation in NFYC58 Quantum Mechanics and Molecular Physics, NFYC56 Solid State Physics, NFYD66 Optoelectronics I

Course organization:
The laboration part (1.5 p) consists of 12 h laboratory work (at two occasions). The theoretical part (3.5 p) consists of 40 h lectures including examples for solutions. In connection to this course, there will be a visit to some relevant industrial laboratories.

Course content:
Crystal structure (extended). pn-junction. Charge carriers. Quantum Wells. Heterostructures. Recombination. Material growth. Processing. High speed devices. Power devices. Transistors - different types. Tunnelling structures. Lasers. Detectors.

Course literature:
Ben Streetman: Solid State Electronic Devices

LAB1Laboratory work 2p
TEN1Written examination 3p.
Course language is Swedish.