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| TFYY39 | Solid State Electronics, 3 p (sw) /Fasta tillståndets elektronik/ Advancement level: D | |
| Aim: This course will provide more insight of advanced semiconductor devices that are interesting for microelectronics industries, their physics, limitations, and the development of new device concepts based on heterostructure, superlattice, and nanoelectronic materials. The participants will also be given an overview about the state of art device research and the main ideas for industry applications. Prerequisites: The courses TFFY 34 Semiconductor Technology and TFFY 35 Semiconductor Physics are desirable, but not compulsory.Course organization: The course is composed of lectures, laborations, and an industrial visit.Course content: Review of electronic properties of semiconductors (band structures, carrier distribution, recombination, and transport theory); junction theories for p-n junctions, metal-semiconductor contacts, and semiconductor heterojunctions; device physics of bipolar and field effect transistors for high speed and microwave uses, including poly-Si emitter BJTs (10-50 GHz), Si/SiGe and III-V HBTs (100-300 GHz), small-size MOSFETs (< 1 micrometer), and HEMTs; and power electronic devices. Course literature: M. Shur: Physics of Semiconductor Devices, Prentice-Hall, New Jersey, together with the course compendium (W.-X. Ni, IFM). Other references S.M. Sze: Physics of Semiconductor Devices, John Wiley & Sons, New York; B. Streetman: Solid State Electronic Devices, Prentice-Hall, New Jersey. | ||
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