| NFYD84 | Growth of Semiconductors, 7,5 ECTS-points /Halvledartillväxt/ Advancement level: D | |
| Aim: After the invention of the bipolar transistor in 1947, the semiconductor industry has made a tremendous progress. Most of the semiconductor materials when used for application s within microeletronics and power eleectronics are required to be in form of single crystals, both bulk crystals and thin epitaxial layers. Device performances are strongly dependent on the quality of the crystals used. The aim of this course is to provide a general introduction to the fundamental principles of growth of semiconductor materials with properties suitable for dvice fabrications. In addition, some advanced growth techniques wil be demonstrated and the students will have the unique chance to combine theoretical knowledge with a practical implementation.Prerequisites: Thermodynamics, Material Science, Semiconductors physics.Course organization: Lectures 20h and two elaborations. Course content: -Elemantary process of crystal growth, energy of formation of new phases, nucleation. -Growth theories, growth mechanisms. -Driving force for the growth, supersaturation, supercooling. -Mass transport, free molecular flux, diffusion and Stefan flow, convection. -Kinetics, adsorption, desorption, surface diffusion. -relationship between supersaturation, growth macanism and growth rate. -Vapor-solid, liquid-solid phase transformation and different techniques-capability and limitations. -Growth related defects. -Epitaxy. -Examples of growthof modern semiconductor materials, Si,GaAs, GaN and SiC.Course literature: A.W. Vere: Chrystal Growth-Principles and Progress (Plenum prtess, New York and London, 1987), Lecture notes. | ||
| TEN1 | A written examination | |