| TFYA23 |
Crystal Growth Technology, 6 ECTS credits.
/Kristalltillväxt teknologi/
For:
Fys
MPN
Y
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Prel. scheduled
hours: 26
Rec. self-study hours: 134
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Area of Education: Science
Subject area: Physics
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Advancement level
(G1, G2, A): A
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Aim:
The overall aim of this course is to give a general introduction to fundamental principles for growth of semiconductor and optical crystals with suitable characteristics for production of components. In addition to that, advanced growth techniques will be demonstrated and the students will have the unique possibility to combine theoretical knowledge with practical applications. This course is connected to the research activities on crystal growth that are carried out at IFM in close cooperation with Swedish industry, e.g. the company Norstel AB (Norrkoping), etc. This means that the students will be expected to do the following after completing this course:
- Have knowledge and be able to utilize thermodynamics relations in crystal growth.
- Define basic principles of phase transition and motivate the choice of growth methods for different materials.
- Apply theoretical background to analyze crystal growth mechanism in different material systems.
- Predict material properties through knowledge of different growth methods.
- Use knowledge of crystal growth methods in order to solve problems within physics, chemistry and material science areas.
- Calculate parameters and design crystal growth systems.
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Prerequisites: (valid for students admitted to programmes within which the course is offered)
Termodynamics and statistical mechanics, Solid state physics.
Note: Admission requirements for non-programme students usually also include admission requirements for the programme and threshhold requirements for progression within the programme, or corresponding.
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Supplementary courses:
New Materials
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Organisation:
Lectures and laboratory work
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Course contents:
- Elementary crystal growth processes, phase transitions, nucleation of new phases.
- Crystal growth theories, growth mechanisms.
- Driving force for growth, supersaturation, undercooling.
- Mass transport, molecular flows, diffusion and Stefan flow, convection.
- Kinetics, adsorption, desorption, surface diffusion.
- Relation between supersaturation, growth mechanism and growth rate.
- Transformations gas - solid state, liquid phase - solid state and different growth techniques - capacity and limitations.
- Growth related defects.
- Epitaxy.
- Examples from growth of modern semiconductors - Si, GaAs, GaN and SiC.
- Growth of important electronic and optoelectronic crystals by hydrothermal technique.
- Growth of gemstones.
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Course literature:
K. Byrappa, T. Ohachi (Eds), Crystal growth technology. William Andrew, Springer, 2004 (ISBN 0-8155-1453-0)
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Examination: |
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Oral exam, which will include a written report on laboratories and a selected topic, related to the course subject. |
4 p
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6 ECTS
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Course language is English.
Department offering the course: IFM.
Director of Studies: Leif Johansson
Examiner: Rositza Yakimova
Course Syllabus in Swedish
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