TNE081 Semiconductor Technology 2007

Study Guide@lith

Valid for year : 2007

TNE081	Semiconductor Technology, 10,5 ECTS credits. /Halvledarteknik och tillverkning/ For: ED MES
	Prel. scheduled hours: 84 Rec. self-study hours: 196
	Area of Education: Science Subject area: Physics
	Advancement level (G1, G2, A): A
	Aim: The aim of the course is to present the fundamental principle of semiconductor devices and how models of devices can be created from this understanding. How the semiconductor devices are fabricated? Basic unit processes will be presented. The students get the basic knowledge that is necessary to understand, work and produce integrated circuits and optoelectronics. After this course the student should Describe manufacturing steps, lithography, oxidation, metallization, and etching. Integrate the manufacturing steps for manufacturing of bipolar transistors, MOSFET, CMOS and MEMS. Understand and describe the terms, band gap, energy level, mobility, effective mass, charge generation and recombination, doping, drift, diffusion, equilibrium and steady state. Calculate and determine the material parameters (band gap, doping, level, carrier lifetime, diffusion length) from electrical characteristics of semiconductor devices. Apply relations between temperature, illumination and charge generation/recombination and conductivity and current density. Design pn-junctions, Schottky diodes, bipolar transistor, MOSFET, and pn-solar cells having given characteristics.
	Prerequisites: (valid for students admitted to programmes within which the course is offered) Calculus, Linear algebra, Physical Modelling, Modern Physics, Electromagnetic field theory Note: Admission requirements for non-programme students usually also include admission requirements for the programme and threshhold requirements for progression within the programme, or corresponding.
	Supplementary courses: TNE078 Charge Transport in Organic and Inorganic Materials, TNE069 System Design.
	Organisation: Lectures and tutorial, laboratory work. Weekly home assignment
	Course contents: Basic semiconductor physics, concept and mechanisms such as band diagram, valence- and conduction band, Fermi level, Fermi-Dirac statistics, band gap, effective mass, drift, diffusion, doping, intrinsic, extrinsic, electron-hole pair, charge generation and recombination, minority carriers, majority carriers etc. will be discussed thoroughly. Function and modelling of pn-junctions, contact potential, depletion region, and different break down mechanisms for pn-junctions will be explained. Functions and I-V characteristics of some other devices such as MOSFET and bipolar transistors will also be discussed. Basic unit processes such as ion implantation, diffusion, thermal oxidation, anealing, deposition processes such as evaporation, sputtering, CVD, epitaxial growth, fabrication processes such as optical and non-optical lithography, photoresist and etching will be introduced. The students should enter deeply into one of the subjects below and present their work for the whole class. Device isolation, Contacts and metallization, CMOS technology, GaAs technology, bipolar technology and MEMS. Laboratory assignment includes device simulation in PSPICE and classical labs with diode and transistor measurements.
	Course literature: Jasprit Singh, "Semiconductor Devices, basic principles, Wiley & Sons 2002 ISBN 0-471-36245-X. Introduction to Microfabrication;Sami Franssila, Wiley&Sons (2004) ISBN: 0470-85106-6
	Examination:
	Written examination Laboratory work Assignment, written and oral presentation	5 p 1 p 1 p	/ / /	7,5 ECTS 1,5 ECTS 1,5 ECTS


Course language is English. Department offering the course: ITN. Director of Studies: Amir Baranzahi Examiner: Amir Baranzahi Link to the course homepage at the department Course Syllabus in Swedish

Linköping Institute of Technology
Contact: TFK , val@tfk.liu.se Last updated: 02/28/2007